| PART |
Description |
Maker |
| CY7C1429JV18-250BZC CY7C1429JV18-250BZI CY7C1429JV |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1418BV18-278BZC CY7C1418BV18-278BZI CY7C1418BV |
36-Mbit DDR-II SRAM 2-Word Burst Architecture 4M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1520AV18-300BZC CY7C1520AV18-300BZI CY7C1520AV |
72-Mbit DDR-II SRAM 2-Word Burst Architecture 8M X 9 DDR SRAM, 0.5 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture 8M X 9 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1418AV18-267BZC |
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
CYPRESS SEMICONDUCTOR CORP
|
| HM66AEB18204BP-30 |
36 MBit DDR II SRAM 4 Word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1319KV18-250BZC CY7C1319KV18-12 |
18-Mbit DDR II SRAM Four-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1317BV18 |
18-Mbit DDR-II SRAM 4-Word Burst Architecture
|
Cypress
|
| CY7C1916BV18-250BZC CY7C1316BV18 CY7C1316BV18-167B |
18-Mbit DDR-II SRAM 2-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
| CY7C1427JV18-300BZC CY7C1427JV18-300BZI CY7C1427JV |
36-Mbit DDR-II SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1323BV25 |
18-Mbit 4-Word Burst SRAM with DDR-I Architecture
|
Cypress Semiconductor
|
| CY7C1319CV18-167BZC CY7C1319CV18-167BZI CY7C1319CV |
18-Mbit DDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
